THEORY OF THE ENERGY-BAND LINEUP AT AN ABRUPT SEMICONDUCTOR HETEROJUNCTION.FRENSLEY WR; KROEMER H.1977; PHYS. REV., B; U.S.A.; DA. 1977; VOL. 16; NO 6; PP. 2642-2652; BIBL. 34 REF.Article

A SIMPLE LINEARIZED VCOSCHLEGEL A; SZABO L.1980; ARCH. ELEKTRON. UEBERTRAG.-TECH.; DEU; DA. 1980; VOL. 34; NO 7-8; PP. 342-344; ABS. GER; BIBL. 5 REF.Article

ORIENTATION DEPENDENCE OF BREAKDOWN VOLTAGE IN GAASLEE MH; SZE SM.1980; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1980; VOL. 23; NO 9; PP. 1007-1009; BIBL. 5 REF.Article

DETERMINATION OF AN INITIAL MESH FOR COMPUTER SIMULATION OF H-ABRUPT DEVICESBENNETT RJ; THOMA KA.1981; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 20; PP. 747-748; BIBL. 6 REF.Article

Interface connection rules for effective-mass wave functions at an abrupt heterojunction between two different semiconductorsQI-GAO ZHU; KROEMER, H.Physical review. B, Condensed matter. 1983, Vol 27, Num 6, pp 3519-3527, issn 0163-1829Article

SELF-CONSISTENT CALCULATION OF THE ELECTRONIC STRUCTURE AT AN ABRUPT GAAS-GE INTERFACE.BARAFF GA; APPELBAUM JA; HAMANN DR et al.1977; PHYS. REV. LETTERS; U.S.A.; DA. 1977; VOL. 38; NO 5; PP. 237-240; BIBL. 11 REF.Article

SEMICONDUCTOR DIODES FOR RF APPLICATIONS.HOWARD NR.1977; ELECTRON. ENGNG; G.B.; DA. 1977; VOL. 49; NO 598; PP. 68-69Article

VARIABILITY STUDY AND DESIGN CONSIDERATIONS OF P-N JUNCTION HYPERABRUPT VARACTOR DIODES.KUMAR R; BHATTACHARYYA AB.1977; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1977; VOL. 24; NO 10; PP. 1270-1272; BIBL. 3 REF.Article

MAXIMIZATION OF THE OUTPUT POWER IN RESONANT FREQUENCY MULTIPLIERS WITH IDEAL ABRUPT JUNCTION DIODESPRICE GB; KHAN PJ.1981; PROC. IEEE; ISSN 0018-9219; USA; DA. 1981; VOL. 69; NO 4; PP. 476-478; BIBL. 5 REF.Article

IMPROVED APPROXIMATE ANALYTIC CHARGE DISTRIBUTIONS FOR ABRUPT P-N JUNCTIONSSHIRTS RB; GORDON RG.1979; J. APPL. PHYS.; USA; DA. 1979; VOL. 50; NO 4; PP. 2840-2847; BIBL. 15 REF.Article

A MATHEMATICAL STUDY OF SPACE-CHARGE LAYER CAPACITANCE FOR AN ABRUPT P-N SEMICONDUCTOR JUNCTION.KENNEDY DP.1977; SOLID-STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 4; PP. 311-319; BIBL. 22 REF.Article

ETUDE ANALYTIQUE D'UNE DIODE A JONCTION ABRUPTE EN POLARISATION INVERSEDESTINE J.1979; REV. E; BEL; DA. 1979; VOL. 9; NO 7; PP. 137-146; BIBL. 19 REF.Serial Issue

DISTINCTION BETWEEN AVALANCHE AND TUNNELING BREAKDOWN IN ONE-SIDED ABRUPT JUNCTIONSALBRECHT H; LERACH L.1978; APPL. PHYS.; DEU; DA. 1978; VOL. 16; NO 2; PP. 191-194; BIBL. 19 REF.Article

THE STEP N-N⁺ HOMOJUNCTION.KUZNICKI ZT.1978; BULL. ACAD. POLON. SCI., SCI. TECH.; POL; DA. 1978; VOL. 26; NO 3; PP. 259-268; ABS. RUS; BIBL. 13 REF.Article

LOW-FREQUENCY MULTIPLICATION NOISE IN REFERENCE DIODES FOR SMALL MULTIPLICATION FACTORS.JEVTIC MM; TJAPKIN DA.1977; ELECTRON. LETTERS; G.B.; DA. 1977; VOL. 13; NO 16; PP. 468-470; BIBL. 6 REF.Article

ANALYTICAL SOLUTIONS FOR THE BREAKDOWN VOLTAGE OF ABRUPT CYLINDRICAL AND SPHERICAL JUNCTIONS.JAYANT BALIGA B; GHANDHI SK.1976; SOLID-STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 9; PP. 739-744; BIBL. 13 REF.Article

Sub-30 nm P⁺ abrupt junction formation in strained Si/Si_1-xGe_x MOS deviceLEE, K. L; CHU, J; OTT, J et al.IEDm : international electron devices meeting. 2002, pp 379-382, isbn 0-7803-7462-2, 4 p.Conference Paper

Capacité et distribution du champ électrique dans une structure p-n abrupte asymétrique à couche d'inversion intermédiaireKONSTANTINOV, O. V; MEZRIN, O. A.Fizika i tehnika poluprovodnikov. 1984, Vol 18, Num 12, pp 2166-2176, issn 0015-3222Article

Establishment of an effective-mass Hamiltonian for abrupt heterojunctionsMORROW, R. A.Physical review. B, Condensed matter. 1987, Vol 35, Num 15, pp 8074-8079, issn 0163-1829Article

A mathematical study of general analytical models for step p-n semiconductor junctionsYING-CHAO RUAN; PARANJAPE, B. V; JING-QING TANG et al.Journal of applied physics. 1985, Vol 58, Num 7, pp 2662-2671, issn 0021-8979Article

Parameters of a non-overlapped hyperabrupt structureGUPTA, R. P; SHARMA, M. K; KHOKLE, W. S et al.International journal of electronics. 1984, Vol 57, Num 3, pp 339-350, issn 0020-7217Article

Recombination current in abrupt semiconductor p-n junctionsSIMEONOV, S. S; IVANOVICH, M. D.Physica status solidi. A. Applied research. 1984, Vol 82, Num 1, pp 275-284, issn 0031-8965Article

ABRUPT GA_1-XAL_XAS-GAAS QUANTUM WELL HETEROSTRUCTURES GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITIONDUPUIS RD; DAPKUS PD; GARNER CM et al.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 34; NO 5; PP. 335-337; BIBL. 19 REF.Article

Modeling Si/Si_1-xGe_x heterojunction bipolar transistorsYUAN, J. S.Solid-state electronics. 1992, Vol 35, Num 7, pp 921-926, issn 0038-1101Article

Structure of Si-Ge amorphous-semiconductor heterojunctionsSETTE, F; ABELES, B; YANG, L et al.Physical review. B, Condensed matter. 1988, Vol 37, Num 5, pp 2749-2751, issn 0163-1829Article